VISHAY · FETs & Power MOSFETs · MPN SISS5108DN-T1-GE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| RDS(on) | 12.4mΩ@7.5V |
| Number | 1 N-channel |
| Type | N-Channel |
100V 55.9A 4V 20W 12.4mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS