VISHAY · FETs & Power MOSFETs · MPN SISS46DN-T1-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 45.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 14.6mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
| Type | N-Channel |
100V 45.3A 3.4V 65.7W 14.6mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS