VISHAY · FETs & Power MOSFETs · MPN SISS42DN-T1-GE3
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 11.8A;40.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 4.8W;57W |
| RDS(on) | 14.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
100V 3.4V 14.4mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS