VISHAY · FETs & Power MOSFETs · MPN SISS40DN-T1-GE3
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| Gate Charge(Qg) | 18.5nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 36.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 845pF |
100V 36.5A 3.5V 3.7W 21mΩ@10V 1 N-channel PowerPAK1212-8S Single FETs, MOSFETs RoHS