VISHAY · FETs & Power MOSFETs · MPN SISS32LDN-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 57nC@10V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 15.5pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
| Type | N-Channel |
N-Channel 80V 63A 65.7W Surface Mount PowerPAK1212-8SH