VISHAY · FETs & Power MOSFETs · MPN SISS32DN-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 17.4A;63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 5W;65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.93nF |
80V 3.8V 7.2mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS