VISHAY · FETs & Power MOSFETs · MPN SISS30DN-T1-GE3
No reviews yet — be the first to review VISHAY SISS30DN-T1-GE3.
| Gate Charge(Qg) | 19.6nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 209pF |
| Current - Continuous Drain(Id) | 54.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 4.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 8.25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.666nF |
| Type | N-Channel |
N-Channel 80V 54.7A 4.8W Surface Mount PowerPAK1212-8S