VISHAY · FETs & Power MOSFETs · MPN SISS30ADN-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 23nC@7.5V |
| Current - Continuous Drain(Id) | 54.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 10.5mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.295nF |
| Type | N-Channel |
N-Channel 80V 54.7A 57W Surface Mount PowerPAK1212-8S