VISHAY · FETs & Power MOSFETs · MPN SISS27ADN-T1-GE3
No reviews yet — be the first to review VISHAY SISS27ADN-T1-GE3.
| Gate Charge(Qg) | 55nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 24.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 4.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF |
| RDS(on) | 5.1mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.66nF |
30V 24.3A 2.2V 4.8W 5.1mΩ@10V 1 P-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS