VISHAY · FETs & Power MOSFETs · MPN SISS26LDN-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 15.2nC@10V |
| Current - Continuous Drain(Id) | 81.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 4.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
N-Channel 60V 81.2A 36W Surface Mount PowerPAK1212-8S