VISHAY · FETs & Power MOSFETs · MPN SISS26DN-T1-GE3
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| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 23.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 4.5mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.71nF |
60V 23.3A 3.6V 57W 4.5mΩ@7.5V 1 N-channel SO-8 Single FETs, MOSFETs RoHS