VISHAY · FETs & Power MOSFETs · MPN SISS23DN-T1-GE3
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| Gate Charge(Qg) | 140nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 835pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 11.5mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.84nF |
| Type | P-Channel |
P-Channel 20V 50A 57W Surface Mount PowerPAK1212-8S