VISHAY · FETs & Power MOSFETs · MPN SISS22LDN-T1-GE3
No reviews yet — be the first to review VISHAY SISS22LDN-T1-GE3.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.54nF |
| Type | N-Channel |
60V 40A 2.5V 5.1mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS