VISHAY · FETs & Power MOSFETs · MPN SISS12DN-T1-GE3
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| Gate Charge(Qg) | 28.7nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 37.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 1.98mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.27nF |
40V 37.5A 2.4V 5W 1.98mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS