VISHAY · FETs & Power MOSFETs · MPN SISS10ADN-T1-GE3
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| Gate Charge(Qg) | 18.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 109A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 4.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| RDS(on) | 2.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.03nF |
| Type | N-Channel |
N-Channel 40V 109A 4.8W Surface Mount PowerPAK1212-8S