VISHAY · FETs & Power MOSFETs · MPN SISS05DN-T1-GE3
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 2.1nF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.93nF |
| Type | P-Channel |
P-Channel 30V 9A 5W Surface Mount PowerPAK1212-8S