VISHAY · FETs & Power MOSFETs · MPN SISS04DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 93nC@10V |
| Current - Continuous Drain(Id) | 50.5A;80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 5W;65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 202pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.46nF |
30V 2.2V 1.2mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS