VISHAY · FETs & Power MOSFETs · MPN SISHA18ADN-T1-GE3
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 22A;60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.5W;26.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 15.5pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.65nF |
30V 2.5V 4.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS