VISHAY · FETs & Power MOSFETs · MPN SISHA12ADN-T1-GE3
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 22A;25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 3.5W;28W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.07nF |
30V 1.1V 4.3mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS