VISHAY · FETs & Power MOSFETs · MPN SISH892BDN-T1-GE3
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| Gate Charge(Qg) | 26.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 30.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
| Type | N-Channel |
N-Channel 100V 20A 29W Surface Mount PowerPAK-SO-8DC