VISHAY · FETs & Power MOSFETs · MPN SISH625DN-T1-GE3
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| Gate Charge(Qg) | 39.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.427nF |
| Type | P-Channel |
P-Channel 30V 35A 52W Surface Mount PowerPAK1212-8SH