VISHAY · FETs & Power MOSFETs · MPN SISH615ADN-T1-GE3
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| Gate Charge(Qg) | 59nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 22.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 183pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.59nF |
| Vgs | ±12V |
| Type | P-Channel |
20V 22.1A 400mV 3.7W 3.5mΩ@10V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS