VISHAY · FETs & Power MOSFETs · MPN SISH536DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 67.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 26.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 4.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
30V 67.4A 2.2V 26.5W 4.6mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8SH Single FETs, MOSFETs RoHS