VISHAY · FETs & Power MOSFETs · MPN SISH472DN-T1-GE3
No reviews yet — be the first to review VISHAY SISH472DN-T1-GE3.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 15A;20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.5W;28W |
| RDS(on) | 8.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 997pF |
30V 2.5V 8.9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS