VISHAY · FETs & Power MOSFETs · MPN SISH407DN-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 57nC@4.5V |
| Output Capacitance(Coss) | 405pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 9.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.76nF |
| Type | P-Channel |
20V 25A 1V 33W 9.5mΩ@4.5V 1 P-Channel P-Channel PowerPAK1212-8SH Single FETs, MOSFETs RoHS