VISHAY SISH402DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISH402DN-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@15V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

N-Channel 30V 35A 3.8W Surface Mount PowerPAK1212-8SH

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