VISHAY · FETs & Power MOSFETs · MPN SISH129DN-T1-GE3
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14.4A;35A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.8W;52.1W |
| RDS(on) | 11.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.345nF |
30V 1.5V 11.4mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS