VISHAY · FETs & Power MOSFETs · MPN SISH114ADN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 18A;35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.7W;39W |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.23nF |
30V 1.2V 7.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS