VISHAY · FETs & Power MOSFETs · MPN SISH107DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Output Capacitance(Coss) | 208pF |
| Current - Continuous Drain(Id) | 34.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.57W |
| RDS(on) | 25.1mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 182pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
| Type | P-Channel |
P-Channel 30V 34.4A 3.57W Surface Mount PowerPAK1212-8SH