VISHAY SISH103DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISH103DN-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)354pF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.6W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.54nF
TypeP-Channel

Technical details

P-Channel 30V 54A 41.6W Surface Mount PowerPAK1212-8SH

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