VISHAY · FETs & Power MOSFETs · MPN SISH101DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 32nC |
| Current - Continuous Drain(Id) | 16.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 408pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.595nF |
P-Channel 30V 16.9A Surface Mount PowerPAK1212-8