VISHAY · FETs & Power MOSFETs · MPN SISF06DN-T1-GE3
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 101A |
| Pd - Power Dissipation | 69.4W |
| RDS(on) | 6.95mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.05nF |
| Gate Charge(Qg) | 21nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 101A 69.4W Surface Mount PowerPAK1212-8SCD