VISHAY · FETs & Power MOSFETs · MPN SISF04DN-T1-GE3
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 108A |
| Pd - Power Dissipation | 69.4W |
| RDS(on) | 4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.6nF |
| Gate Charge(Qg) | 29nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
108A 69.4W 4mΩ@10V 2.3V 2 N-Channel PowerPAK1212-8SCD FET, MOSFET Arrays RoHS