VISHAY · FETs & Power MOSFETs · MPN SISF00DN-T1-GE3
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 60A |
| RDS(on) | 5mΩ@10V |
| Pd - Power Dissipation | 44.4W |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.7nF |
| Gate Charge(Qg) | 53nC@10V |
| Operating Temperature | -55℃~+150℃ |
60A 5mΩ@10V 44.4W 2.1V 2 N-Channel FET, MOSFET Arrays RoHS