VISHAY · FETs & Power MOSFETs · MPN SISB46DN-T1-GE3
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| Current - Continuous Drain(Id) | 34A |
|---|---|
| Pd - Power Dissipation | 6W |
| RDS(on) | 15.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 22nC@10V |
| Operating Temperature | - |
| Output Capacitance(Coss) | - |
34A 6W 15.8mΩ@4.5V 2.2V 2 N-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS