VISHAY · FETs & Power MOSFETs · MPN SISA88DN-T1-GE3
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| Gate Charge(Qg) | 8.3nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 40.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 985pF |
N-Channel 30V 40.5A Surface Mount PowerPAK1212-8