VISHAY SISA72DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISA72DN-T1-GE3

No reviews yet — be the first to review VISHAY SISA72DN-T1-GE3.

Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)455pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.24nF
TypeN-Channel

Technical details

40V 60A 2.4V 52W 4.8mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs