VISHAY · FETs & Power MOSFETs · MPN SISA40DN-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 53nC@10V |
| Output Capacitance(Coss) | 1.29nF |
| Current - Continuous Drain(Id) | 162A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF |
| RDS(on) | 4.2mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.415nF |
| Type | N-Channel |
N-Channel 20V 162A 33W Surface Mount PowerPAK1212-8