VISHAY · FETs & Power MOSFETs · MPN SISA35DN-T1-GE3
No reviews yet — be the first to review VISHAY SISA35DN-T1-GE3.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 24W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | P-Channel |
P-Channel 30V 16A 24W Surface Mount PowerPAK1212-8