VISHAY · FETs & Power MOSFETs · MPN SISA26DN-T1-GE3
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| Gate Charge(Qg) | 29nC |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 730pF |
| Current - Continuous Drain(Id) | 29.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 2.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.247nF |
| Vgs | ±16V |
N-Channel 25V 29.1A 3.6W Surface Mount PowerPAK1212-8