VISHAY · FETs & Power MOSFETs · MPN SISA12BDN-T1-GE3
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 655pF |
| Current - Continuous Drain(Id) | 104A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.71nF |
30V 104A 2.4V 40W 5mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS