VISHAY · FETs & Power MOSFETs · MPN SISA10DN-T1-GE3
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| Gate Charge(Qg) | 15.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.425nF |
N-Channel 30V 3.6W Surface Mount PowerPAK1212-8