VISHAY · FETs & Power MOSFETs · MPN SISA04DN-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 34nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.04nF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 3.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.595nF |
30V 40A 2.2V 52W 3.1mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS