VISHAY · FETs & Power MOSFETs · MPN SISA01DN-T1-GE3
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| Gate Charge(Qg) | 84nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 22.4A;60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 3.7W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 4.9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.49nF |
30V 2.2V 4.9mΩ@10V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS