VISHAY · FETs & Power MOSFETs · MPN SIS990DN-T1-GE3
No reviews yet — be the first to review VISHAY SIS990DN-T1-GE3.
| Current - Continuous Drain(Id) | 4.1A |
|---|---|
| RDS(on) | 85mΩ@10V |
| Pd - Power Dissipation | 2.8W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 250pF |
| Gate Charge(Qg) | 3.3nC@7.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 73pF |
N-Channel 100V 4.1A 2.8W Surface Mount PowerPAK1212-8