VISHAY · FETs & Power MOSFETs · MPN SIS932EDN-T1-GE3
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| RDS(on) | 22mΩ@4.5V |
| Pd - Power Dissipation | 14.8W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1nF |
| Gate Charge(Qg) | 9.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
6A 22mΩ@4.5V 14.8W 1.4V 2 N-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS