VISHAY · FETs & Power MOSFETs · MPN SIS903DN-T1-GE3
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 40mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2.565nF |
| Gate Charge(Qg) | 42nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
6A 2.6W 40mΩ@1.8V 1V 2 P-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS