VISHAY · FETs & Power MOSFETs · MPN SIS892DN-T1-GE3
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| Gate Charge(Qg) | 6.7nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 29mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 611pF |
N-Channel 100V 8A 43W Surface Mount PowerPAK1212-8