VISHAY · FETs & Power MOSFETs · MPN SIS892ADN-T1-GE3
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| Gate Charge(Qg) | 6.1nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 217pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 47mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
| Type | N-Channel |
N-Channel 100V 28A 33W Surface Mount Power-PAK-1212-8