VISHAY · FETs & Power MOSFETs · MPN SIS890DN-T1-GE3
No reviews yet — be the first to review VISHAY SIS890DN-T1-GE3.
| Gate Charge(Qg) | 9.5nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 291pF |
| Current - Continuous Drain(Id) | 309A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.1pF |
| RDS(on) | 23.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 802pF |
| Type | N-Channel |
N-Channel 100V 309A 3.7W Surface Mount PowerPAK1212-8